<3s.mi-l.onau.ctoi ij~* ma. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistors telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2n6771/6772/6773 description ? collector-emitter sustaining voltage- : vceo(sus)= soov(min)- 2n6771 = 350v(min)- 2n6772 = 400v(min)- 2N6773 ? high switching speed ? low saturation voltage applications ? designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. absolute maximum ratings(ta=25c) symbol vcev vceo(sus) vebo ic icm ib pc tj tstg parameter collector-emitter voltage vbe=-1.5v collector-emitter voltage 2n6771 2n6772 2N6773 2n6771 2n6772 2N6773 emitter-base voltage collector current-continuous collector current-peak base current-continuous collector power dissipation@tc=25c junction temperature storage temperature value 450 550 650 300 350 400 8 8 10 4 150 200 -65-200 unit v v v a a a w "c c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.17 unit 'c/w 3. pin ^ 2 1.base 2. emitter 3. collect or (case) to-3 package te f i i i -ju-d /cn""\- 9? < \^: ^s' i _ c *pl r / i 5 c j m3s mm dm dm a 39 b 25.30 c 780 d 090 e 140 max 90 26.s7 8.30 1.10 1.60 g 10.9? h 548 k 1140 l 1675 n 1s.40 q 4.00 u 3000 430 13.50 17xb 19.82 4.20 j02q 4.50 ! gb t f ; b nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistors 2n6771/6772/6773 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vbe(sat) icev iebo ups cob fr parameter collector-emitter sustaining voltage 2n6771 2n6772 2N6773 collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current 2n6771 2n6772 2N6773 emitter cutoff current dc current gain output capacitance current-gain?bandwidth product conditions lc= 200ma ; ib= 0 lc= 5a; ib= 1a lc=5a;lb=1a,tc= 125'c lc= 8a; ib= 4a lc= 5a; ib= 1a vce=450v;vbe=-1.5v vce= 450v;vbe= -1 .5v,tc= 125'c vce= 550v;vbe= -1 .5v vce= 550v;vbe= -1.5v,tc= 125'c vce=650v;vbe=-1-5v vce= 650v;vbe= -1.5v,tc= 125'c veb= 8v; lc=0 lc= 5a ; vc6= 3v le=0;vcb=10v;ftest=1mhz lc=0.2a;vce=10v min 300 350 400 10 50 15 typ. max 1.0 2.0 2.0 1.6 0.1 1.0 0.1 1.0 0.1 1.0 2.0 40 300 60 unit v v v v ma ma pf mhz switching times td tr 'stg tf delay time rise time storage time fall time 1c 5a, ib1 -ib2- ta 0.1 0.5 2.5 0.4 u s us u s u s
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